US PATENT SUBCLASS 257 / 70
.~.~.~ Recrystallized semiconductor material

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

49  DF  NON-SINGLE CRYSTAL, OR RECRYSTALLIZED, SEMICONDUCTOR MATERIAL FORMS PART OF ACTIVE JUNCTION (INCLUDING FIELD-INDUCED ACTIVE JUNCTION) {9}
66  DF  .~ Field effect device in non-single crystal, or recrystallized, semiconductor material {3}
67  DF  .~.~ In combination with device formed in single crystal semiconductor material (e.g., stacked FETs) {3}
70.~.~.~ Recrystallized semiconductor material

DEFINITION

Classification: 257/70

Recrystallized semiconductor material:

(under subclass 67) Subject matter wherein the combined device contains a non-single semiconductor region of recrystallized material.

(1) Note. Recrystallized semiconductor material has been processed, typically by heat or laser irradiation to cause growth of large regions of substantially single crystal material to obtain properties approximating those of completely single crystal material.