US PATENT SUBCLASS 257 / 68
.~.~.~ Capacitor element in single crystal semiconductor (e.g., DRAM)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

49  DF  NON-SINGLE CRYSTAL, OR RECRYSTALLIZED, SEMICONDUCTOR MATERIAL FORMS PART OF ACTIVE JUNCTION (INCLUDING FIELD-INDUCED ACTIVE JUNCTION) {9}
66  DF  .~ Field effect device in non-single crystal, or recrystallized, semiconductor material {3}
67  DF  .~.~ In combination with device formed in single crystal semiconductor material (e.g., stacked FETs) {3}
68.~.~.~ Capacitor element in single crystal semiconductor (e.g., DRAM)

DEFINITION

Classification: 257/68

Capacitor element in single crystal semiconductor (e.g., DRAM):

(under subclass 67) Subject matter wherein the device is a capacitor element in single crystal material.