US PATENT SUBCLASS 257 / 69
.~.~.~ Field effect transistor in single crystal material, complememtary to that in non-single crystal, or recrystallized, material (e.g., CMOS)

Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use


257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

49  DF  NON-SINGLE CRYSTAL, OR RECRYSTALLIZED, SEMICONDUCTOR MATERIAL FORMS PART OF ACTIVE JUNCTION (INCLUDING FIELD-INDUCED ACTIVE JUNCTION) {9}
66  DF  .~ Field effect device in non-single crystal, or recrystallized, semiconductor material {3}
67  DF  .~.~ In combination with device formed in single crystal semiconductor material (e.g., stacked FETs) {3}
69.~.~.~ Field effect transistor in single crystal material, complememtary to that in non-single crystal, or recrystallized, material (e.g., CMOS)

DEFINITION

Classification: 257/69

Field effect transistor in single crystal material, complementary to that in non-single crystal, or recrystallized, material (e.g., CMOS):

(under subclass 67) Subject matter wherein there is a field effect transistor in single crystal material complementary in polarity to the field effect device in the non-single crystal, or recrystallized, material (e.g., a CMOS device).