US PATENT SUBCLASS 257 / 396
.~.~.~.~.~ Recessed into semiconductor surface


Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
368  DF  .~.~ Insulated gate field effect transistor in integrated circuit {10}
394  DF  .~.~.~ With means to prevent parasitic conduction channels {2}
395  DF  .~.~.~.~ Thick insulator portion {2}
396.~.~.~.~.~ Recessed into semiconductor surface {2}
397  DF  .~.~.~.~.~.~> In vertical-walled groove
398  DF  .~.~.~.~.~.~> Combined with heavily doped channel stop portion


DEFINITION

Classification: 257/396

Recessed into semiconductor surface:

(under subclass 395) Subject matter wherein the thick insulator portion is recessed into the semiconductor device surface.