| 257 / | HD | ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES) |
|
| 213 | DF | FIELD EFFECT DEVICE {6} |
| 288 | DF | .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17} |
| 368 | DF | .~.~ Insulated gate field effect transistor in integrated circuit {10} |
| 394 | DF | .~.~.~ With means to prevent parasitic conduction channels {2} |
| 395 | DF | .~.~.~.~ Thick insulator portion {2} |
| 396 |  | .~.~.~.~.~ Recessed into semiconductor surface {2} |
| 397 | DF | .~.~.~.~.~.~> In vertical-walled groove |
| 398 | DF | .~.~.~.~.~.~> Combined with heavily doped channel stop portion |