US PATENT SUBCLASS 257 / 389
.~.~.~.~ With thick insulator over source or drain region

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
368  DF  .~.~ Insulated gate field effect transistor in integrated circuit {10}
386  DF  .~.~.~ With means to reduce parasitic capacitance {2}
389.~.~.~.~ With thick insulator over source or drain region

DEFINITION

Classification: 257/389

With thick insulator over source or drain region:

(under subclass 386) Subject matter wherein the means to reduce the parasitic capacitance is a thick insulating material layer located over the source or drain region.