US PATENT SUBCLASS 257 / 387
.~.~.~.~ Gate electrode overlaps at least one of source or drain by no more than depth of source or drain (e.g., self-aligned gate)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
368  DF  .~.~ Insulated gate field effect transistor in integrated circuit {10}
386  DF  .~.~.~ With means to reduce parasitic capacitance {2}
387.~.~.~.~ Gate electrode overlaps at least one of source or drain by no more than depth of source or drain (e.g., self-aligned gate) {1}
388  DF  .~.~.~.~.~> Gate electrode consists of refractory or platinum group metal or silicide

DEFINITION

Classification: 257/387

Gate electrode overlaps at least one of source or drain by no more than depth of source or drain (e.g., self-aligned gate):

(under subclass 386) Subject matter wherein the gate electrode overlaps at least one source or drain by no more than the depth of the source or the drain (e.g., self-aligned gate).

SEE OR SEARCH THIS CLASS, SUBCLASS:

282, 283, 328, 342, and 794, for other self-aligned gate devices.