US PATENT SUBCLASS 257 / 361
.~.~.~.~.~ For operation as bipolar or punchthrough element

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
355  DF  .~.~ With overvoltage protective means {1}
356  DF  .~.~.~ For protecting against gate insulator breakdown {4}
360  DF  .~.~.~.~ Protection device includes insulated gate transistor structure (e.g., combined with resistor element) {1}
361.~.~.~.~.~ For operation as bipolar or punchthrough element

DEFINITION

Classification: 257/361

For operation as bipolar or punchthrough element:

(under subclass 360) Subject matter wherein the insulated gate transistor structure protection device is configured to operate as a bipolar transistor or to conduct by punchthrough of a depletion region from one pn junction to another pn junction upon application of an overvoltage.