US PATENT SUBCLASS 257 / 360
.~.~.~.~ Protection device includes insulated gate transistor structure (e.g., combined with resistor element)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
355  DF  .~.~ With overvoltage protective means {1}
356  DF  .~.~.~ For protecting against gate insulator breakdown {4}
360.~.~.~.~ Protection device includes insulated gate transistor structure (e.g., combined with resistor element) {1}
361  DF  .~.~.~.~.~> For operation as bipolar or punchthrough element

DEFINITION

Classification: 257/360

Protection device includes insulated gate transistor structure (e.g., combined with resistor element):

(under subclass 356) Subject matter wherein the means for protecting against insulator breakdown is an insulated gate

transistor structure.