US PATENT SUBCLASS 257 / 356
.~.~.~ For protecting against gate insulator breakdown

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
355  DF  .~.~ With overvoltage protective means {1}
356.~.~.~ For protecting against gate insulator breakdown {4}
357  DF  .~.~.~.~> In complementary field effect transistor integrated circuit {1}
360  DF  .~.~.~.~> Protection device includes insulated gate transistor structure (e.g., combined with resistor element) {1}
362  DF  .~.~.~.~> Punchthrough or bipolar element
363  DF  .~.~.~.~> Including resistor element

DEFINITION

Classification: 257/356

For protecting against gate insulator breakdown:

(under subclass 355) Subject matter wherein the overvoltage protection means is structured to protect against electrical breakdown (shorting) of the gate insulator.