US PATENT SUBCLASS 257 / 362
.~.~.~.~ Punchthrough or bipolar element


Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
355  DF  .~.~ With overvoltage protective means {1}
356  DF  .~.~.~ For protecting against gate insulator breakdown {4}
362.~.~.~.~ Punchthrough or bipolar element


DEFINITION

Classification: 257/362

Punchthrough or bipolar element:

(under subclass 356) Subject matter wherein the means for protecting against insulator breakdown is a bipolar device or is configured to conduct by punchthrough of a depletion region from one pn junction to another pn junction upon application of an overvoltage.