US PATENT SUBCLASS 257 / 359
.~.~.~.~.~.~ As thin film structure (e.g., polysilicon resistor)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
355  DF  .~.~ With overvoltage protective means {1}
356  DF  .~.~.~ For protecting against gate insulator breakdown {4}
357  DF  .~.~.~.~ In complementary field effect transistor integrated circuit {1}
358  DF  .~.~.~.~.~ Including resistor element {1}
359.~.~.~.~.~.~ As thin film structure (e.g., polysilicon resistor)

DEFINITION

Classification: 257/359

As thin film structure (e.g., polysilicon resistor):

(under subclass 358) Subject matter wherein the resistor is in the form of a thin film resistor (e.g., a polysilicon resistor).