| 257 / | HD | ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES) |
| 213 | DF | FIELD EFFECT DEVICE {6} |
| 288 | DF | .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17} |
| 355 | DF | .~.~ With overvoltage protective means {1} |
| 356 | DF | .~.~.~ For protecting against gate insulator breakdown {4} |
| 357 | DF | .~.~.~.~ In complementary field effect transistor integrated circuit {1} |
| 358 | | .~.~.~.~.~ Including resistor element {1} |
| 359 | DF | .~.~.~.~.~.~> As thin film structure (e.g., polysilicon resistor) |