US PATENT SUBCLASS 257 / 342
.~.~.~.~.~ With means to reduce ON resistance

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
327  DF  .~.~ Short channel insulated gate field effect transistor {6}
335  DF  .~.~.~ Active channel region has a graded dopant concentration decreasing with distance from source region (e.g., double diffused device, DMOS transistor) {6}
341  DF  .~.~.~.~ Plural sections connected in parallel (e.g., power MOSFET) {1}
342.~.~.~.~.~ With means to reduce ON resistance

DEFINITION

Classification: 257/342

With means to reduce ON resistance:

(under subclass 341) Subject matter wherein the device further contains means to reduce the resistance of the device when it is conducting electricity, i.e., in the ON condition.