US PATENT SUBCLASS 326 / 116
.~.~ Schottky-gate FET (i.e., MESFET)

Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use


326 /   HD   ELECTRONIC DIGITAL LOGIC CIRCUITRY

104  DF  FUNCTION OF AND, OR, NAND, NOR, or NOT {7}
112  DF  .~ Field-effect transistor (e.g., JFET, etc.) {7}
116.~.~ Schottky-gate FET (i.e., MESFET) {2}
117  DF  .~.~.~> Depletion or enhancement
118  DF  .~.~.~> Diode transistor logic

DEFINITION

Classification: 326/116

Schottky-gate FET (i.e., MESFET):

(under subclass 112) Subject matter including a junction field-effect transistor which operates on the principle of the injection of very highly concentrated majority carriers across a potential difference barrier which is formed by the junction of a lightly doped semiconductor material and a metal layer deposited thereon.

(1) Note. A MESFET or metal-semiconductor field-effect transistor can be made of silicon or gallium arsenide; however, GaAs type MESFETs are most commonly used.