US PATENT SUBCLASS 324 / 769
.~.~.~.~ Field effect transistor


Current as of: June, 1999
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324 /   HD   ELECTRICITY: MEASURING AND TESTING

500  DF  FAULT DETECTING IN ELECTRIC CIRCUITS AND OF ELECTRIC COMPONENTS {10}
537  DF  .~ Of individual circuit component or element {17}
765  DF  .~.~ Test of semiconductor device {1}
766  DF  .~.~.~ With barrier layer {3}
769.~.~.~.~ Field effect transistor


DEFINITION

Classification: 324/769

Field effect transistor:

(under subclass 766) Subject matter wherein a logic circuit includes one or more unipolar transistors in which current carriers are injected at a source terminal and pass to a drain terminal through a channel of semiconductor material whose conductivity depends largely on an electrical field applied to the semiconductor from a control electrode (gate).

(1) Note. In a unipolar transistor, the source to drain current involves only one type of charge carrier (i.e., holes in a p-type material channel and electrons in an N-type material channel).