US PATENT SUBCLASS 324 / 768
.~.~.~.~ Bipolar transistor

Current as of: June, 1999
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324 /   HD   ELECTRICITY: MEASURING AND TESTING

500  DF  FAULT DETECTING IN ELECTRIC CIRCUITS AND OF ELECTRIC COMPONENTS {10}
537  DF  .~ Of individual circuit component or element {17}
765  DF  .~.~ Test of semiconductor device {1}
766  DF  .~.~.~ With barrier layer {3}
768.~.~.~.~ Bipolar transistor

DEFINITION

Classification: 324/768

Bipolar transistor:

(under subclass 766) Subject matter including a semiconductor device of the type having at least three electrodes (emitter, base, and collector), two potential barriers and having a controlled current flow of both majority and minority carriers (i.e., holes and electrons).

(1) Note. A conventional bipolar transistor has three electrodes which include NPN or PNP type materials; in the NPN type, current flows from a collector terminal to an emitter terminal, and in the PNP type transistor, current flows from an emitter terminal to a collector terminal.