US PATENT SUBCLASS 257 / 760
.~.~.~.~ Separating insulating layer is laminate or composite of plural insulating materials (e.g., silicon oxide on silicon nitride, silicon oxynitride)

Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use


257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

734  DF  COMBINED WITH ELECTRICAL CONTACT OR LEAD {14}
741  DF  .~ Of specified material other than unalloyed aluminum {10}
750  DF  .~.~ Layered {10}
758  DF  .~.~.~ Multiple metal levels on semiconductor, separated by insulating layer (e.g., multiple level metallization for integrated circuit) {2}
760.~.~.~.~ Separating insulating layer is laminate or composite of plural insulating materials (e.g., silicon oxide on silicon nitride, silicon oxynitride)

DEFINITION

Classification: 257/760

Separating insulating layer is laminate or composite of plural insulating materials (e.g., silicon oxide on silicon nitride, silicon oxynitride):

(under subclass 758) Subject matter wherein there is at least one separating insulator layer between different metal layers, which separating insulator layer is itself made up of plural sublayers, or which separating insulator layer is a composite such as a mixture of silicon oxide and silicon nitride.