| 257 / | HD | ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES) |
|
| 734 | DF | COMBINED WITH ELECTRICAL CONTACT OR LEAD {14} |
| 741 | DF | .~ Of specified material other than unalloyed aluminum {10} |
| 750 |  | .~.~ Layered {10} |
| 751 | DF | .~.~.~> At least one layer forms a diffusion barrier |
| 752 | DF | .~.~.~> Planarized to top of insulating layer |
| 753 | DF | .~.~.~> With adhesion promoting means (e.g., layer of material) to promote adhesion of contact to an insulating layer |
| 754 | DF | .~.~.~> At least one layer of silicide or polycrystalline silicon {3} |
| 758 | DF | .~.~.~> Multiple metal levels on semiconductor, separated by insulating layer (e.g., multiple level metallization for integrated circuit) {2} |
| 761 | DF | .~.~.~> At least one layer containing vanadium, hafnium, niobium, zirconium, or tantalum |
| 762 | DF | .~.~.~> At least one layer containing silver or copper |
| 763 | DF | .~.~.~> At least one layer of molybdenum, titanium, or tungsten {1} |
| 765 | DF | .~.~.~> At least one layer of an alloy containing aluminum |
| 766 | DF | .~.~.~> At least one layer containing chromium or nickel |