US PATENT SUBCLASS 257 / 750
.~.~ Layered


Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use



257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

734  DF  COMBINED WITH ELECTRICAL CONTACT OR LEAD {14}
741  DF  .~ Of specified material other than unalloyed aluminum {10}
750.~.~ Layered {10}
751  DF  .~.~.~> At least one layer forms a diffusion barrier
752  DF  .~.~.~> Planarized to top of insulating layer
753  DF  .~.~.~> With adhesion promoting means (e.g., layer of material) to promote adhesion of contact to an insulating layer
754  DF  .~.~.~> At least one layer of silicide or polycrystalline silicon {3}
758  DF  .~.~.~> Multiple metal levels on semiconductor, separated by insulating layer (e.g., multiple level metallization for integrated circuit) {2}
761  DF  .~.~.~> At least one layer containing vanadium, hafnium, niobium, zirconium, or tantalum
762  DF  .~.~.~> At least one layer containing silver or copper
763  DF  .~.~.~> At least one layer of molybdenum, titanium, or tungsten {1}
765  DF  .~.~.~> At least one layer of an alloy containing aluminum
766  DF  .~.~.~> At least one layer containing chromium or nickel


DEFINITION

Classification: 257/750

Layered:

(under subclass 741) Subject matter wherein the specified contact material is layered.