US PATENT SUBCLASS 257 / 754
.~.~.~ At least one layer of silicide or polycrystalline silicon

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

734  DF  COMBINED WITH ELECTRICAL CONTACT OR LEAD {14}
741  DF  .~ Of specified material other than unalloyed aluminum {10}
750  DF  .~.~ Layered {10}
754.~.~.~ At least one layer of silicide or polycrystalline silicon {3}
755  DF  .~.~.~.~> Polysilicon laminated with silicide
756  DF  .~.~.~.~> Multiple polysilicon layers
757  DF  .~.~.~.~> Silicide of refractory or platinum group metal

DEFINITION

Classification: 257/754

At least one layer of silicide or polycrystalline silicon:

(under subclass 750) Subject matter wherein at least one layer of material is made up of a silicide or polycrystalline silicon.

SEE OR SEARCH THIS CLASS, SUBCLASS:

381, and 538, for polycrystalline silicon resistive elements connected to active semiconductor electronic devices.

554, and 588, for bipolar transistor devices with a polycrystalline semiconductor connection electrode.