US PATENT SUBCLASS 257 / 556
.~.~.~.~ Including lateral bipolar transistor structure

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

499  DF  INTEGRATED CIRCUIT STRUCTURE WITH ELECTRICALLY ISOLATED COMPONENTS {9}
544  DF  .~ With pn junction isolation {8}
552  DF  .~.~ With bipolar transistor structure {3}
555  DF  .~.~.~ Complementary bipolar transistor structures (e.g., integrated injection logic, I2L) {1}
556.~.~.~.~ Including lateral bipolar transistor structure

DEFINITION

Classification: 257/556

Including lateral bipolar transistor structure:

(under subclass 555) Subject matter wherein at least one of the pnp or npn complementary bipolar transistors is a lateral structure (i.e., has current flow between its emitter and collector parallel to a major surface of the semiconductor chip).