US PATENT SUBCLASS 257 / 552
.~.~ With bipolar transistor structure

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

499  DF  INTEGRATED CIRCUIT STRUCTURE WITH ELECTRICALLY ISOLATED COMPONENTS {9}
544  DF  .~ With pn junction isolation {8}
552.~.~ With bipolar transistor structure {3}
553  DF  .~.~.~> Transistors of same conductivity type (e.g., npn) having different current gain or different operating voltage characteristics
554  DF  .~.~.~> With connecting region made of polycrystalline semiconductor material (e.g., polysilicon base contact)
555  DF  .~.~.~> Complementary bipolar transistor structures (e.g., integrated injection logic, I2L) {1}

DEFINITION

Classification: 257/552

With bipolar transistor structure:

(under subclass 544) Subject matter wherein the junction isolation is formed in an integrated circuit between active devices at least one of which has a bipolar transistor structure.