US PATENT SUBCLASS 257 / 554
.~.~.~ With connecting region made of polycrystalline semiconductor material (e.g., polysilicon base contact)

Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use


257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

499  DF  INTEGRATED CIRCUIT STRUCTURE WITH ELECTRICALLY ISOLATED COMPONENTS {9}
544  DF  .~ With pn junction isolation {8}
552  DF  .~.~ With bipolar transistor structure {3}
554.~.~.~ With connecting region made of polycrystalline semiconductor material (e.g., polysilicon base contact)

DEFINITION

Classification: 257/554

With connecting region made of polycrystalline semiconductor material (e.g., polysilicon base contact):

(under subclass 552) Subject matter wherein a connecting region or contact made of a polycrystalline semiconductor material is present in the bipolar integrated circuit.