US PATENT SUBCLASS 257 / 555
.~.~.~ Complementary bipolar transistor structures (e.g., integrated injection logic, I2L)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

499  DF  INTEGRATED CIRCUIT STRUCTURE WITH ELECTRICALLY ISOLATED COMPONENTS {9}
544  DF  .~ With pn junction isolation {8}
552  DF  .~.~ With bipolar transistor structure {3}
555.~.~.~ Complementary bipolar transistor structures (e.g., integrated injection logic, I2L) {1}
556  DF  .~.~.~.~> Including lateral bipolar transistor structure

DEFINITION

Classification: 257/555

Complementary bipolar transistor structures (e.g., integrated injection logic, I[supscrpt]2[end supscrpt]L):

(under subclass 552) Subject matter wherein the device contains complementary bipolar transistor structures (i.e., both pnp and npn bipolar transistor structures).