US PATENT SUBCLASS 257 / 539
.~.~.~ Combined with bipolar transistor


Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

499  DF  INTEGRATED CIRCUIT STRUCTURE WITH ELECTRICALLY ISOLATED COMPONENTS {9}
528  DF  .~ Passive components in ICs {4}
536  DF  .~.~ Including resistive element {2}
539.~.~.~ Combined with bipolar transistor {4}
540  DF  .~.~.~.~> With compensation for non-linearity (e.g., dynamic isolation pocket bias)
541  DF  .~.~.~.~> Pinch resistor
542  DF  .~.~.~.~> Resistor has same doping as emitter or collector of bipolar transistor
543  DF  .~.~.~.~> Lightly doped junction isolated resistor (e.g., ion implanted resistor)


DEFINITION

Classification: 257/539

Combined with bipolar transistor:

(under subclass 536) Subject matter wherein the device includes at least one bipolar transistor structure along with the resistive element.