US PATENT SUBCLASS 257 / 542
.~.~.~.~ Resistor has same doping as emitter or collector of bipolar transistor

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

499  DF  INTEGRATED CIRCUIT STRUCTURE WITH ELECTRICALLY ISOLATED COMPONENTS {9}
528  DF  .~ Passive components in ICs {4}
536  DF  .~.~ Including resistive element {2}
539  DF  .~.~.~ Combined with bipolar transistor {4}
542.~.~.~.~ Resistor has same doping as emitter or collector of bipolar transistor

DEFINITION

Classification: 257/542

Resistor has same doping as emitter or collector of bipolar transistor:

(under subclass 539) Subject matter wherein the resistor region has the same doping concentration and profile (e.g., is formed in the same step as) either the emitter or the collector region of the bipolar transistor with which the resistor is combined in the same integrated circuit.

(1) Note. Most resistors in bipolar integrated circuits are formed with the same doping step as the bipolar transistor base regions. Resistors that are instead formed at the same doping step as the emitter or collector, rather than the base, go in this subclass.