US PATENT SUBCLASS 257 / 381
.~.~.~.~ With multiple levels of polycrystalline silicon

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
368  DF  .~.~ Insulated gate field effect transistor in integrated circuit {10}
379  DF  .~.~.~ Combined with passive components (e.g., resistors) {2}
381.~.~.~.~ With multiple levels of polycrystalline silicon

DEFINITION

Classification: 257/381

With multiple levels of polycrystalline silicon:

(under subclass 380) Subject matter wherein the integrated circuit has more than one layer of polycrystalline silicon.