US PATENT SUBCLASS 257 / 326
.~.~.~.~ With additional, non-memory control electrode or channel portion (e.g., accessing field effect transistor structure)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
314  DF  .~.~ Variable threshold (e.g., floating gate memory device) {2}
324  DF  .~.~.~ Multiple insulator layers (e.g., MNOS structure) {2}
326.~.~.~.~ With additional, non-memory control electrode or channel portion (e.g., accessing field effect transistor structure)

DEFINITION

Classification: 257/326

With additional, non-memory control electrode or channel portion (e.g., accessing field effect transistor structure):

(under subclass 324) Subject matter wherein the multiple insulator layer device has an additional, non-memory control electrode or channel portion, for example, for forming an accessing field effect transistor structure.