US PATENT SUBCLASS 257 / 325
.~.~.~.~ Non-homogeneous composition insulator layer (e.g., graded composition layer or layer with inclusions)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
314  DF  .~.~ Variable threshold (e.g., floating gate memory device) {2}
324  DF  .~.~.~ Multiple insulator layers (e.g., MNOS structure) {2}
325.~.~.~.~ Non-homogeneous composition insulator layer (e.g., graded composition layer or layer with inclusions)

DEFINITION

Classification: 257/325

Non-homogeneous composition insulator layer (e.g., graded composition layer or layer with inclusions):

(under subclass 324) Subject matter wherein at least one layer has a non-homogeneous composition (e.g., a layer which

varies in composition along at least one dimension thereof, or has inclusions of foreign material therein).