US PATENT SUBCLASS 257 / 267
.~.~.~.~ With Schottky barrier gate

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
256  DF  .~ Junction field effect transistor (unipolar transistor) {15}
263  DF  .~.~ Vertical controlled current path {3}
266  DF  .~.~.~ With multiple parallel current paths (e.g., grid gate) {1}
267.~.~.~.~ With Schottky barrier gate

DEFINITION

Classification: 257/267

With Schottky barrier gate:

(under subclass 266) Subject matter including a gate which is formed by a metal to semiconductor rectifying junction.