US PATENT SUBCLASS 257 / 230
.~.~.~.~ With blooming suppression structure

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
215  DF  .~ Charge transfer device {11}
225  DF  .~.~ Non-electrical input responsive (e.g., light responsive imager, input programmed by size of storage sites for use as a read-only memory, etc.) {6}
229  DF  .~.~.~ Having structure to improve output signal (e.g., exposure control structure) {1}
230.~.~.~.~ With blooming suppression structure

DEFINITION

Classification: 257/230

With blooming suppression structure:

(under subclass 229) Subject matter wherein the structural means to improve the output signal prevents spill over of a large amount of signal charge generated at a storage site which receives a non-electrical input signal of very high intensity to adjacent storage sites.

(1) Note. The antiblooming suppression structure may include a drain structure for removing charge from storage sites.

(2) Note. The antiblooming drain structure may be located in the device beneath storage sites rather than on its surface.