| 257 / | HD | ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES) |
| 9 | DF | THIN ACTIVE PHYSICAL LAYER WHICH IS (1) AN ACTIVE POTENTIAL WELL LAYER THIN ENOUGH TO ESTABLISH DISCRETE QUANTUM ENERGY LEVELS OR (2) AN ACTIVE BARRIER LAYER THIN ENOUGH TO PERMIT QUANTUM MECHANICAL TUNNELING OR (3) AN ACTIVE LAYER THIN ENOUGH TO PERMIT CARRIER TRANSMISSION WITH SUBSTANTIALLY NO SCATTERING (E.G., SUPERLATTICE, QUANTUM WELL, OR BALLISTIC TRANSPORT DEVICE) {5} |
| 12 | DF | .~ Heterojunction {3} |
| 14 | DF | .~.~ Quantum well {4} |
| 15 | | .~.~.~ Superlattice {6} |
| 16 | DF | .~.~.~.~> Of amorphous semiconductor material |
| 17 | DF | .~.~.~.~> With particular barrier dimension |
| 18 | DF | .~.~.~.~> Strained layer superlattice {1} |
| 20 | DF | .~.~.~.~> Field effect device |
| 21 | DF | .~.~.~.~> Light responsive structure |
| 22 | DF | .~.~.~.~> With specified semiconductor materials |