US PATENT SUBCLASS 257 / 16
.~.~.~.~ Of amorphous semiconductor material

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

9  DF  THIN ACTIVE PHYSICAL LAYER WHICH IS (1) AN ACTIVE POTENTIAL WELL LAYER THIN ENOUGH TO ESTABLISH DISCRETE QUANTUM ENERGY LEVELS OR (2) AN ACTIVE BARRIER LAYER THIN ENOUGH TO PERMIT QUANTUM MECHANICAL TUNNELING OR (3) AN ACTIVE LAYER THIN ENOUGH TO PERMIT CARRIER TRANSMISSION WITH SUBSTANTIALLY NO SCATTERING (E.G., SUPERLATTICE, QUANTUM WELL, OR BALLISTIC TRANSPORT DEVICE) {5}
12  DF  .~ Heterojunction {3}
14  DF  .~.~ Quantum well {4}
15  DF  .~.~.~ Superlattice {6}
16.~.~.~.~ Of amorphous semiconductor material

DEFINITION

Classification: 257/16

Of amorphous semiconductor material:

(under subclass 15) Subject matter wherein a superlattice active layer is made of a semiconductor crystal with no regular crystalline structure.