US PATENT SUBCLASS 257 / 21
.~.~.~.~ Light responsive structure

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

9  DF  THIN ACTIVE PHYSICAL LAYER WHICH IS (1) AN ACTIVE POTENTIAL WELL LAYER THIN ENOUGH TO ESTABLISH DISCRETE QUANTUM ENERGY LEVELS OR (2) AN ACTIVE BARRIER LAYER THIN ENOUGH TO PERMIT QUANTUM MECHANICAL TUNNELING OR (3) AN ACTIVE LAYER THIN ENOUGH TO PERMIT CARRIER TRANSMISSION WITH SUBSTANTIALLY NO SCATTERING (E.G., SUPERLATTICE, QUANTUM WELL, OR BALLISTIC TRANSPORT DEVICE) {5}
12  DF  .~ Heterojunction {3}
14  DF  .~.~ Quantum well {4}
15  DF  .~.~.~ Superlattice {6}
21.~.~.~.~ Light responsive structure

DEFINITION

Classification: 257/21

Light responsive structure:

(under subclass 15) Subject matter wherein absorption of light (ultraviolet, visible, or infrared) by a superlattice active layer or junction causes a change in the current-voltage characteristic of the device.