US PATENT SUBCLASS 257 / 20
.~.~.~.~ Field effect device

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

9  DF  THIN ACTIVE PHYSICAL LAYER WHICH IS (1) AN ACTIVE POTENTIAL WELL LAYER THIN ENOUGH TO ESTABLISH DISCRETE QUANTUM ENERGY LEVELS OR (2) AN ACTIVE BARRIER LAYER THIN ENOUGH TO PERMIT QUANTUM MECHANICAL TUNNELING OR (3) AN ACTIVE LAYER THIN ENOUGH TO PERMIT CARRIER TRANSMISSION WITH SUBSTANTIALLY NO SCATTERING (E.G., SUPERLATTICE, QUANTUM WELL, OR BALLISTIC TRANSPORT DEVICE) {5}
12  DF  .~ Heterojunction {3}
14  DF  .~.~ Quantum well {4}
15  DF  .~.~.~ Superlattice {6}
20.~.~.~.~ Field effect device

DEFINITION

Classification: 257/20

Field effect device:

(under subclass 15) Subject matter wherein the superlattice active layer forms the conduction channel of a field effect device (i.e., one which has two or more terminals denoted as source and gate with a conduction channel therebetween, and in which the current through the conducting channel is controlled by an electric field coming from a voltage which is applied between the gate and source terminals thereof).