US PATENT SUBCLASS 204 / 192.32
.~.~ Sputter etching

Current as of: June, 1999
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204 /   HD   CHEMISTRY: ELECTRICAL AND WAVE ENERGY

*  DD  PROCESSES AND PRODUCTS {7}
192.1  DF  .~ Coating, forming or etching by sputtering {3}
192.32.~.~ Sputter etching {3}
192.33  DF  .~.~.~> Measuring or testing (e.g., of operating parameters, end point determination, etc.)
192.34  DF  .~.~.~> Ion beam etching (e.g., ion milling, etc.)
192.35  DF  .~.~.~> Etching specified material {2}

DEFINITION

Classification: 204/192.32

Sputter etching:

(under subclass 192.1) Processes for removing materials from a substrate wherein the substrate is subjected to bombardment by atomic particles (e.g., ions) and the activation energy is supplied at least in part by momentum transfer.

SEE OR SEARCH CLASS

438, Semiconductor Device Manufacturing: Process,

707+, for processes of vapor phase chemical etching of a semiconductive substrate utilizing irradiation of electromagnetic or wave energy and, particularly, subclasses 710+ for such chemical etching processes wherein the irradiation produces a plasma or glow discharge.