US PATENT SUBCLASS 349 / 47
.~.~.~.~.~.~ With gate electrode between liquid crystal and semiconductor layer

Current as of: June, 1999
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349 /   HD   LIQUID CRYSTAL CELLS, ELEMENTS AND SYSTEMS

19  DF  PARTICULAR EXCITATION OF LIQUID CRYSTAL {6}
33  DF  .~ Electrical excitation of liquid crystal (i.e., particular voltage pulses, AC vs. DC, threshold voltages, etc.) {8}
41  DF  .~.~ With particular switching device {2}
42  DF  .~.~.~ Transistor {2}
43  DF  .~.~.~.~ Structure of transistor {3}
46  DF  .~.~.~.~.~ With particular gate electrode structure {1}
47.~.~.~.~.~.~ With gate electrode between liquid crystal and semiconductor layer

DEFINITION

Classification: 349/47

With gate electrode between liquid crystal and semiconductor layer:

(under subclass 46) Subject matter wherein the gate electrode is located between the liquid crystal layer and the semiconductor layer.