US PATENT SUBCLASS 349 / 46
.~.~.~.~.~ With particular gate electrode structure

Current as of: June, 1999
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349 /   HD   LIQUID CRYSTAL CELLS, ELEMENTS AND SYSTEMS

19  DF  PARTICULAR EXCITATION OF LIQUID CRYSTAL {6}
33  DF  .~ Electrical excitation of liquid crystal (i.e., particular voltage pulses, AC vs. DC, threshold voltages, etc.) {8}
41  DF  .~.~ With particular switching device {2}
42  DF  .~.~.~ Transistor {2}
43  DF  .~.~.~.~ Structure of transistor {3}
46.~.~.~.~.~ With particular gate electrode structure {1}
47  DF  .~.~.~.~.~.~> With gate electrode between liquid crystal and semiconductor layer

DEFINITION

Classification: 349/46

With particular gate electrode structure:

(under subclass 43) Subject matter wherein the material, location, or other detail of the gate electrode of the transistor is specified.

(1) Note. Included here are thinned electrodes for easy disconnection.