US PATENT SUBCLASS 326 / 84
.~.~.~ Bi-CMOS

Current as of: June, 1999
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326 /   HD   ELECTRONIC DIGITAL LOGIC CIRCUITRY

62  DF  INTERFACE (E.G., CURRENT DRIVE, LEVEL SHIFT, ETC.) {3}
82  DF  .~ Current driving (e.g., fan in/out, off chip driving, etc.) {2}
83  DF  .~.~ Field-effect transistor {4}
84.~.~.~ Bi-CMOS {1}
85  DF  .~.~.~.~> Having plural output pull-up or pull-down transistors

DEFINITION

Classification: 326/84

Bi-CMOS:

(under subclass 83) Subject matter wherein the current driving circuit includes both bipolar and complementary metal-oxide semiconductor transistors.

(1) Note. A bipolar transistor is a semiconductor device having at least three electrodes (emitter, base, and collector), two potential barriers, and wherein a controlled current flow comprises both majority and minority carriers (i.e., holes and electrons).

(2) Note. A CMOS or complementary metal-oxide semiconductor device is a device having a p-material channel and an n-material channel enhancement type metal-oxide field-effect transistor (MOSFET) which are connected in series across a power supply with their gates tied together.

(3) Note. A MOSFET is a field-effect transistor having a metallic gate insulated from the channel by an oxide layer (e.g., SiO2). A MOSFET is either enhancement-type (normally turned-off) or depletion-type (normally turned-on).