US PATENT SUBCLASS 326 / 69-- .~.~.~ ECL to/from GaAs FET (e.g., MESFET, etc.)

US PATENT SUBCLASS 326 / 69
.~.~.~ ECL to/from GaAs FET (e.g., MESFET, etc.)

Current as of: June, 1999
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326 /	HD	ELECTRONIC DIGITAL LOGIC CIRCUITRY

62	DF	INTERFACE (E.G., CURRENT DRIVE, LEVEL SHIFT, ETC.) {3}
63	DF	.~ Logic level shifting (i.e., interface between devices of different logic families) {3}
68	DF	.~.~ Field-effect transistor (e.g., JFET, MOSFET, etc.) {4}
69		.~.~.~ ECL to/from GaAs FET (e.g., MESFET, etc.)

DEFINITION

Classification: 326/69

ECL to/from GaAs FET (e.g., MESFET, etc.):

(under subclass 68) Subject matter comprising the interfacing between an emitter-coupled logic device and a logic device from a family of GaAs material semiconductor field-effect transistor.

(1) Note. An emitter-coupled logic device is a nonsaturated bipolar logic device in which the emitters of the input logic transistors are coupled to the emitter of a reference transistor.

(2) Note. A MESFET is a junction field-effect transistor having a gate junction formed by a metallic layer deposited on a lightly doped semiconductor material channel. A MESFET is either made of silicon or gallium-arsenide material; however, GaAs type is most commonly used.