US PATENT SUBCLASS 326 / 42
.~.~ Bipolar transistor

Current as of: June, 1999
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326 /   HD   ELECTRONIC DIGITAL LOGIC CIRCUITRY

37  DF  MULTIFUNCTIONAL OR PROGRAMMABLE (E.G., UNIVERSAL, ETC.) {6}
39  DF  .~ Array (e.g., PLA, PAL, PLD, etc.) {4}
42.~.~ Bipolar transistor {1}
43  DF  .~.~.~> Emitter-coupled logic or emitter-follower logic

DEFINITION

Classification: 326/42

Bipolar transistor:

(under subclass 39) Subject matter including a semiconductor device of the type having at least three electrodes (emitter, base, and collector), two potential barriers and having a controlled current flow of both majority and minority carriers (i.e., holes and electrons).

(1) Note. A conventional bipolar transistor has three electrodes which include npn or pnp type materials (in the npn type, current flows from a collector terminal to an emitter terminal; and in the pnp type transistor, current flows from an emitter terminal to a collector terminal).