US PATENT SUBCLASS 326 / 119
.~.~ MOSFET (i.e., metal-oxide semiconductor field-effect transistor)

Current as of: June, 1999
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326 /   HD   ELECTRONIC DIGITAL LOGIC CIRCUITRY

104  DF  FUNCTION OF AND, OR, NAND, NOR, or NOT {7}
112  DF  .~ Field-effect transistor (e.g., JFET, etc.) {7}
119.~.~ MOSFET (i.e., metal-oxide semiconductor field-effect transistor) {2}
120  DF  .~.~.~> Depletion or enhancement
121  DF  .~.~.~> CMOS

DEFINITION

Classification: 326/119

MOSFET (i.e., metal-oxide semiconductor field-effect transistor):

(under subclass 112) Subject matter includes a field-effect transistor having a metallic gate insulated from the channel by an oxide layer (e.g., SiO2, etc.).