US PATENT SUBCLASS 257 / 747
.~.~ With thermal expansion matching of contact or lead material to semiconductor active device


Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

734  DF  COMBINED WITH ELECTRICAL CONTACT OR LEAD {14}
741  DF  .~ Of specified material other than unalloyed aluminum {10}
747.~.~ With thermal expansion matching of contact or lead material to semiconductor active device {1}
748  DF  .~.~.~> Plural layers of specified contact or lead material


DEFINITION

Classification: 257/747

With thermal expansion matching of contact or lead material to semiconductor active device:

(under subclass 741) Subject matter in which the electrical contact or lead material is chosen to have a coefficient of thermal expansion which closely matches that of the semiconductor active device material.

SEE OR SEARCH THIS CLASS, SUBCLASS:

178, for regenerative device with housing and means to avoid stress (e.g., thermal matching of electrode to semiconductor).

633, for thermal expansion compensation between semiconductor and insulating coating.