257 / | HD | ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES) |
734 | DF | COMBINED WITH ELECTRICAL CONTACT OR LEAD {14} |
741 | DF | .~ Of specified material other than unalloyed aluminum {10} |
742 | DF | .~.~ With a semiconductor conductivity substitution type dopant (e.g., germanium in the case of a gallium arsenide semiconductor) in a contact metal {1} |
743 | .~.~.~ For compound semiconductor contact material |