US PATENT SUBCLASS 257 / 742
.~.~ With a semiconductor conductivity substitution type dopant (e.g., germanium in the case of a gallium arsenide semiconductor) in a contact metal

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

734  DF  COMBINED WITH ELECTRICAL CONTACT OR LEAD {14}
741  DF  .~ Of specified material other than unalloyed aluminum {10}
742.~.~ With a semiconductor conductivity substitution type dopant (e.g., germanium in the case of a gallium arsenide semiconductor) in a contact metal {1}
743  DF  .~.~.~> For compound semiconductor contact material

DEFINITION

Classification: 257/742

With a semiconductor conductivity substitution type dopant (e.g., germanium in the case of a gallium arsenide semiconductor) in a contact metal):

(under subclass 741) Subject matter wherein the contact metal

is doped with atoms of an element, e.g., germanium in the case of a semiconductor of gallium arsenide, which changes the conductivity of (i.e., introduces holes or electrons into) the semiconductor material to which the contact is connected.