US PATENT SUBCLASS 257 / 648
.~.~.~ Combined with channel stop region in semiconductor

Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use


257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

629  DF  WITH MEANS TO CONTROL SURFACE EFFECTS {4}
632  DF  .~ Insulating coating {8}
647  DF  .~.~ Insulating layer recessed into semiconductor surface (e.g., LOCOS oxide) {1}
648.~.~.~ Combined with channel stop region in semiconductor

DEFINITION

Classification: 257/648

Combined with channel stop region in semiconductor:

(under subclass 647) Subject matter wherein the recessed insulating layer is combined with a channel stop region, i.e., a region of heavy doping concentration in the underlying semiconductor surface to prevent inversion of the surface by formation of a layer of induced minority carriers.