US PATENT SUBCLASS 257 / 54
.~.~.~ With Schottky barrier to amorphous material

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

49  DF  NON-SINGLE CRYSTAL, OR RECRYSTALLIZED, SEMICONDUCTOR MATERIAL FORMS PART OF ACTIVE JUNCTION (INCLUDING FIELD-INDUCED ACTIVE JUNCTION) {9}
52  DF  .~ Amorphous semiconductor material {4}
53  DF  .~.~ Responsive to nonelectrical external signals (e.g., light) {3}
54.~.~.~ With Schottky barrier to amorphous material

DEFINITION

Classification: 257/54

With Schottky barrier to amorphous material:

(under subclass 53) Subject matter wherein the amorphous semiconductor active junction is formed with a metal, thereby forming a Schottky barrier.