US PATENT SUBCLASS 257 / 502
.~.~ High power or high voltage device extends completely through semiconductor substrate (e.g., backside collector contact)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

499  DF  INTEGRATED CIRCUIT STRUCTURE WITH ELECTRICALLY ISOLATED COMPONENTS {9}
500  DF  .~ Including high voltage or high power devices isolated from low voltage or low power devices in the same integrated circuit {2}
502.~.~ High power or high voltage device extends completely through semiconductor substrate (e.g., backside collector contact)

DEFINITION

Classification: 257/502

High power or high voltage device extends completely through semiconductor substrate (e.g., backside collector contact):

(under subclass 500) Subject matter wherein at least one high voltage or high power device extends completely through the monolithic chip from the top surface to the bottom surface of the chip.