US PATENT SUBCLASS 257 / 500
.~ Including high voltage or high power devices isolated from low voltage or low power devices in the same integrated circuit

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

499  DF  INTEGRATED CIRCUIT STRUCTURE WITH ELECTRICALLY ISOLATED COMPONENTS {9}
500.~ Including high voltage or high power devices isolated from low voltage or low power devices in the same integrated circuit {2}
501  DF  .~.~> Including dielectric isolation means
502  DF  .~.~> High power or high voltage device extends completely through semiconductor substrate (e.g., backside collector contact)

DEFINITION

Classification: 257/500

Including high voltage or high power devices isolated from low voltage or low power devices in the same integrated circuit:

(under subclass 499) Subject matter wherein the monolithic chip includes both electronic components specifically configured for operation at high voltages or high power levels, along with other electronic components which are configured for operation only at low voltages or power levels.

(1) Note. See this class, subclass 491 for monolithic chips

which include active components with specific means provided to increase the breakdown voltage of those active components. The combination of high voltage and low voltage active solid-state devices on the same monolithic chip will only be classified in this subclass (500), if no particular structure is provided to increase the breakdown voltage of the high voltage components.