US PATENT SUBCLASS 257 / 366
.~.~.~ Overlapping gate electrodes

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
365  DF  .~.~ With plural, separately connected, gate electrodes in same device {1}
366.~.~.~ Overlapping gate electrodes

DEFINITION

Classification: 257/366

Overlapping gate electrodes:

(under subclass 365) Subject matter wherein at least one of the plural gate electrodes overlaps another gate electrode.