US PATENT SUBCLASS 257 / 36
.~.~.~ With additional electrode to control conductive state of Josephson junction

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

9  DF  THIN ACTIVE PHYSICAL LAYER WHICH IS (1) AN ACTIVE POTENTIAL WELL LAYER THIN ENOUGH TO ESTABLISH DISCRETE QUANTUM ENERGY LEVELS OR (2) AN ACTIVE BARRIER LAYER THIN ENOUGH TO PERMIT QUANTUM MECHANICAL TUNNELING OR (3) AN ACTIVE LAYER THIN ENOUGH TO PERMIT CARRIER TRANSMISSION WITH SUBSTANTIALLY NO SCATTERING (E.G., SUPERLATTICE, QUANTUM WELL, OR BALLISTIC TRANSPORT DEVICE) {5}
30  DF  .~ Tunneling through region of reduced conductivity {3}
31  DF  .~.~ Josephson {4}
36.~.~.~ With additional electrode to control conductive state of Josephson junction

DEFINITION

Classification: 257/36

With additional electrode to control conductive state of Josephson junction:

(under subclass 31) Subject matter wherein a specific electrode in addition to the pair of superconductive electrodes forming the Josephson junction is used to control the conductive state of the junction.